ap9995gh/j-hf advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 90v lower gate chage r ds(on) 240m fast switching characteristic i d 7a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 6.0 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 1 10 /w data and specifications subject to change without n otice 2 201108171 thermal data parameter 1 maximum thermal resistance, junction-ambient (pcb m ount) 3 operating junction temperature range -55 to 150 storage temperature range continuous drain current, v gs @ 10v 4.4 pulsed drain current 1 15 total power dissipation total power dissipation 3 -55 to 150 halogen-free product + 20 20.8 gate-source voltage parameter rating drain-source voltage 90 continuous drain current, v gs @ 10v 7 the advanced power mosfets from apec provide thedesigner with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device desi gn, low on- resistance and cost-effectiveness. the to-252 package is widely preferred for commercial-indu strial surface mount applications and suited for low voltage appli cations such as dc/dc converters. the through-hole version (ap9995gj) i s available for low-profile applications. g d s to-251(j) g d s to-252(h)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 90 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =3a - - 240 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =3a - 4 - s i dss drain-source leakage current v ds =72v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =3a - 8 12.8 nc q gs gate-source charge v ds =72v - 3 - nc q gd gate-drain ("miller") charge v gs =10v - 3.3 - nc t d(on) turn-on delay time v ds =45v - 8 - ns t r rise time i d =3a - 7.5 - ns t d(off) turn-off delay time r g =3.3 - 10.5 - ns t f fall time v gs =10v - 3 - ns c iss input capacitance v gs =0v - 360 576 pf c oss output capacitance v ds =25v - 40 - pf c rss reverse transfer capacitance f=1.0mhz - 30 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =3a, v gs =0v - - 1.3 v t rr reverse recovery time i s =3a, v gs =0 v , - 40 - ns q rr reverse recovery charge di/dt=100a/s - 85 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 ap9995gh/j-hf
ap9995gh/j-hf fig 1. typical output characteristics fig 2. typical output characteristics total power dissipation 3 fig 3. normalized bv dss v.s. junction fig 4. normalized on-re sistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 3 6 9 12 0 2 4 6 8 10 12 14 16 18 20 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0v 8.0v 7.0v v g =6.0v 0 2 4 6 8 10 12 14 16 18 0 4 8 12 16 20 24 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g = 6.0v 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =3a v g =10v 0 1 2 3 4 5 6 7 0 1 1 2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) (v) 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) i d =1ma i d =250ua
ap9995gh/j-hf fig 7. gate charge characteristics fig 8. typical capacitance characterist ics total power dissipation 3 fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. case temperature 4 0.1 1 10 100 0.1 1 10 100 1000 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 12 0 2 4 6 8 10 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =3a v ds =45v v ds =54v v ds =72v 0 1000 2000 3000 4000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss operation in this area limited by r ds(on) 0 1.5 3 4.5 6 7.5 9 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) 0 2 4 6 8 10 0 2 4 6 8 10 12 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
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